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| QRD1313 Reflective Object Sensor March 2005 QRD1313 Reflective Object Sensor Features Photodarlington output PACKAGE DIMENSIONS Unfocused for sensing diffused surfaces Low cost plastic housing Designed for paper path and other non-contact surface sensing Description The QRD1313 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1313. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Package Dimensions 0.083 (2.11) OPTICAL CENTERLINE 0.240 (6.10) 0.120 (3.05) PIN 1 INDICATOR 0.173 (4.39) 0.183 (4.65) 0.500 (12.7) MIN 0.020 (0.51) SQ. (4X) 2 3 0.100 (2.54) 1 4 Schematic 2 3 0.083 (2.11) PIN 1 COLLECTOR PIN 2 EMITTER PIN 3 ANODE PIN 4 CATHODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. 3. Pins 2 and 4 typically .050" shorter than pins 1 and 3. 4. Dimensions controlled at housing surface. 1 4 (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QRD1313 Rev. 1.0.1 QRD1313 Reflective Object Sensor Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Lead Temperature (Iron)(2,3,4) Lead Temperature (Flow)(2,3) Emitter Continuous Forward Current Reverse Voltage Power Dissipation(1) Sensor Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) VCEO VECO PD 15 5 100 V V mW IF VR PD 50 5 100 mA V mW Symbol TOPR TSTG TSOL-I TSOL-F Rating -40 to +85 -40 to +100 240 for 5 sec 260 for 10 sec Units C C C C NOTES: 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Soldering iron tip 1/16" (1.6 mm) minimum from housing. 4. As long as leads are not under any stress or spring tension. 5. D is the distance from the sensor face to the reflective surface. 6. Crosstalk (ICK) is the collector current measured with the indicated current on the input diode and with no reflective surface. 7. Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. Electrical / Optical Characteristics (TA =25C) Parameter Input (Emitter) Forward Voltage Reverse Leakage Current Output (Sensor) Emitter to Collector Breakdown Collector to Emitter Breakdown Collector to Emitter Leakage Coupled On-State Collector Current(5,7) Crosstalk(8) Saturation Voltage(5,7) IF = 20 mA, VCE = 5V, D = .050" IF = 20 mA, VCE = 5.0V, Ee = 0 IF = 20 mA, IC = 2 mA, D = .050" IC(ON) ICK VCE(SAT) 10.0 -- -- -- -- -- -- 10 1.10 mA A V IE = 100 A, Ee = 0 IC = 100 A, Ee = 0 VCE = 5 V, Ee = 0 BVECO BVCEO ICEO 5 15 -- -- -- -- -- -- 250 V V nA IF = 20 mA VR = 2 V VF IR -- -- -- -- 1.7 100 V A Test Conditions Symbol Min Typ Max Units 2 QRD1313 Rev. 1.0.1 www.fairchildsemi.com QRD1313 Reflective Object Sensor Typical Performance Curves Fig. 1 Forward Voltage vs. Forward Current 1.60 Fig. 2 Normalized Collector Current vs. Forward Current 1.6 1.40 1.4 IC - COLLECTOR CURRENT (mA) VF - FORWARD VOLTAGE (V) 1.2 1.20 1.0 1.00 0.8 0.80 0.6 0.60 0.4 Vceo=5V D=0.05" 0.40 0.2 0.20 0.1 1.0 10 100 0.0 0 10 20 30 40 50 IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) Fig. 3 Normalized Collector Current vs. Temperature 1.00 Fig. 4 Normalized Collector Dark Current vs. Temperature ICEO - NORMALIZED DARK CURRENT IC - COLLECTOR CURRENT (mA) 0.8 104 VCE = 20 V 0.6 105 0.4 VCE = 30 V VCE = 10 V 102 0.2 IF = 10 m,A VCE = 5 V 10 0 -50 -25 0 25 50 75 Normalize VCE = 10 V IF = 0mA TA = 25C 1 0 25 50 75 100 TA - AMBIENT TEMPERATURE (C) TA - AMBIENT TEMPERATURE (C) Fig. 5 Normalized Collector Current vs. Distance 1.0 IF = 20 m,A VCE = 5 V NORMALIZED COLLECTOR CURRENT (mA) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 250 300 350 400 450 500 DISTANCE IN MILS 3 QRD1313 Rev. 1.0.1 www.fairchildsemi.com QRD1313 Reflective Object Sensor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QRD1313 Rev. 1.0.1 www.fairchildsemi.com |
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